Description-

TIP32C PNP Bipolar Power Transistor is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

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Features

• ​ Low saturation voltage

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

• Detailed Specifications

• ​ Transistor Polarity      :- PNP

• Collector−Emitter Voltage (VCEO)     :- 40VDC

• Collector−Base Voltage (VCBO)     :- 40VDC

• Continuous Collector Current (Ic)      :-3ADC

• Continuous Base Current (Ib)      :-1ADC

• Emitter Base Voltage (VEBO)     :- 5VDC

• Power Dissipation (Pd)      :- 40W

• Operating Temperature Range      :- -65 – 150°C

• DC Current Gain (hFE)      :- 10-50