Description-
TIP32C PNP Bipolar Power Transistor is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
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Features
​ Low saturation voltage
Simple drive requirements
High safe operating area
For low distortion complementary designs
Easy to carry and handle
Detailed Specifications
​ Transistor Polarity      :- PNP
Collector−Emitter Voltage (VCEO)     :- 40VDC
Collector−Base Voltage (VCBO)     :- 40VDC
Continuous Collector Current (Ic)      :-3ADC
Continuous Base Current (Ib)      :-1ADC
Emitter Base Voltage (VEBO)     :- 5VDC
Power Dissipation (Pd)      :- 40W
Operating Temperature Range      :- -65 – 150°C
DC Current Gain (hFE)      :- 10-50